Power electronics substrate.

Wide-bandgap power modules (SiC, GaN) for AI data-center power delivery switch hard and run hot, driving large, frequent thermal cycles through the substrate that carries them. CTE mismatch between the ceramic carrier and the power die fatigues the die-attach and bonded copper, the dominant wear-out mechanism in power modules. Standard alumina or AlN substrates ship at fixed expansion values not optimised to the specific device and duty cycle, capping module lifetime.

Strocera supplies the substrate material with CTE tuned toward the SiC/GaN device and the module's duty cycle, as a ready-to-fire powder blend, so the carrier is matched to the device instead of the device derated to the carrier. You specify the device CTE and thermal profile; the formulation is adjusted to reduce die-attach and bond-line stress per cycle, extending module life. In-house forming shortens the qualification loop versus long-lead finished substrates. Expansion behaviour is traceable through the dilatometry stack used to certify the powder.