A carrier for packages that mix silicon, GaN, and SiC on one substrate, where no single expansion value fits every die.
Heterogeneous integration puts dies of different materials on one carrier: silicon logic near 2.6 ×10⁻⁶/K, GaN and SiC higher, memory stacks different again. There is no expansion value that matches all of them, so a fixed carrier is matched to one die and mismatched to the rest. Power transients make it worse, because the dies do not heat at the same rate or to the same temperature, and the local mismatch changes across the carrier during operation. What fails is the interconnect under whichever die sits furthest from the carrier's value.
Strocera formulates the carrier to the weighted behaviour of the integrated stack rather than to any one die, supplied as a ready-to-fire powder blend with expansion adjustable across 100 to 800 °C. You specify the die materials, their placement, and the power map; the mix is adjusted so no single die sits at the extreme of the mismatch. Forming in your own facility keeps the integration process and the iteration loop inside your programme. Thermal conductivity characterization is in progress; discuss the current envelope with our materials team before design-in.
Full Adaptive Glass-Ceramic specActive R&D; thermal-conductivity characterization in progress. Discuss the current envelope with our materials team.
Chiplet and SoC architects integrating silicon, GaN, and SiC dies on a shared carrier.
Engineers working on this often also evaluate:
Tell us the operating conditions. We'll formulate Adaptive Glass-Ceramic to your application, and ship a ready-to-fire powder blend, not a 12-18 month blank.
